Advanced High Voltage Power Device Concepts by B. Jayant Baliga

By B. Jayant Baliga

The units defined in “Advanced MOS-Gated Thyristor suggestions” are used in microelectronics creation apparatus, in strength transmission apparatus, and for terribly excessive strength motor regulate in electrical trains, steel-mills, and so on. complicated options that let bettering the functionality of energy thyristors are mentioned the following, besides units with blocking off voltage services of 5,000-V, 10,000-V and 15,000-V. through the e-book, analytical types are generated to permit an easy research of the buildings and to procure perception into the underlying physics. the result of two-dimensional simulations are supplied to corroborate the analytical versions and provides better perception into the machine operation.

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J. Baliga, “Fundamentals of Power Semiconductor Devices”, Springer Science, New York, 2008. 2. B. J. Baliga, “Advanced Power MOSFET Concepts”, Springer Science, New York, 2009. 3. H. Akagi, “Large Static Converters for Industry and Utility Applications”, Proceedings of the IEEE, Vol. 89, pp. 976–983, 2001. 4. B. J. Baliga, “Silicon Carbide Power Devices”, World Scientific Press, Singapore, 2005. 5. J. Wang, et al, “Smart Grid Technologies: Development of 15-kV SiC IGBTs and Their Impact on Utility Applications”, IEEE Industrial Electronics Magazine, pp.

1619–1623, 1991. References 19 13. B. J. S. Patent 5,543,637, Issued August 6, 1996. 14. P. M. Shenoy and B. J. Baliga, “The Planar 6 H-SiC ACCUFET”, IEEE Electron Device Letters, Vol. EDL-18, pp. 589–591, 1997. 15. W. Fulop, “Calculation of Avalanche Breakdown in Silicon P-N Junctions”, Solid State Electronics, Vol. 10, pp. 39–43, 1967. 16. R. Van Overstraeten and H. DeMan, “Measurements of the Ionization Rates in Diffused Silicon P-N Junctions”, Solid State Electronics, Vol. 13, pp. 583–608, 1970.

2 A/cm2) while the anode voltage was maintained fixed with a load resistance in series with the thyristor structure. 5-kV Thyristor Structure 120 Anode Current Density (A/cm2) 100 10 V 80 60 100 V 40 Anode Bias 500 V 20 0 0 20 60 40 Time (microseconds) 80 100 Fig. 20 Turn-on characteristics for the 5-kV power thyristor structure The turn-on characteristics for the 5-kV power thyristor structure are shown in Fig. 20 for three values of the anode bias. In each case the load resistance was altered to obtain the same anode current density (100 A/cm2) after the thyristor is in the on-state.

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